Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SUD23N06-31-BE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 60V 9.1A/21.4A DPAK
Product Attributes:
Part Number: SUD23N06-31-BE3
Manufacturer: Vishay
Description: MOSFET N-CH 60V 9.1A/21.4A DPAK
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SUD23N06-31-BE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
DIODE GEN PURP 400V 1A DO204AL
DIODE ZENER 62V 800MW DO219AB
TVS DIODE 6.5VWM 11.2VC DO215AA
OPTOISO 5.3KV 4CH TRANS 16DIP
DIODE ZENER 39V 350MW SOT23-3
TVS DIODE 54VWM 87.1VC DO214AC
Product Specifications:
MfrPart.: SUD23N06-31-BE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 60V 9.1A/21.4A DPAKProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET®PartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 60 VCurrent-ContinuousDrain(Id)@25°C: 9.1A (Ta), 21.4A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10VRdsOn(Max)@IdVgs: 31mOhm @ 15A, 10VVgs(th)(Max)@Id: 3V @ 250µAGateCharge(Qg)(Max)@Vgs: 17 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 670 pF @ 25 VFETFeature: -PowerDissipation(Max): 5.7W (Ta), 31.25W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: TO-252AASUD23N06-31-BE3 | Vishay | NHE Electronics
SUD23N06-31-BE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.