Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SUD23N06-31L-T4BE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 60V 9.1A/21.4A DPAK
SUD23N06-31L-T4BE3 Images
Product Attributes:
Part Number: SUD23N06-31L-T4BE3
Manufacturer: Vishay
Description: MOSFET N-CH 60V 9.1A/21.4A DPAK
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SUD23N06-31L-T4BE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
SFERNICE POTENTIOMETERS & TRIMME
TRIMMER 2K OHM 0.25W GW TOP ADJ
FIXED IND 270NH 855MA 110MOHM TH
TVS DIODE 75VWM 121VC DO204AC
THERM NTC 100KOHM 4064K 0805
Product Specifications:
MfrPart.: SUD23N06-31L-T4BE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 60V 9.1A/21.4A DPAKProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET®PartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 60 VCurrent-ContinuousDrain(Id)@25°C: 9.1A (Ta), 21.4A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10VRdsOn(Max)@IdVgs: 31mOhm @ 15A, 10VVgs(th)(Max)@Id: 3V @ 250µAGateCharge(Qg)(Max)@Vgs: 17 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 670 pF @ 25 VFETFeature: -PowerDissipation(Max): 5.7W (Ta), 31.25W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: TO-252AASUD23N06-31L-T4BE3 | Vishay | NHE Electronics
SUD23N06-31L-T4BE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.