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NXPSC126506Q, WeEn Semiconductors, Discrete Semiconductor Products~Diodes - Rectifiers - Single, SILICON CARBIDE POWER DIODE
DIODE SCHOTTKY 650V 8A TO220AC
DIODE GEN PURP 200V 8A TO220AC
SILICON CARBIDE SCHOTTKY DIODE
Product Specifications:
Manufacturer Product Number: NXPSC126506QMfr: WeEn SemiconductorsDetailed Description: SILICON CARBIDE POWER DIODEProduct Category: Discrete Semiconductor Products~Diodes - Rectifiers - SinglePackage: TubeSeries: -Part Status: ActiveDiode Type: Silicon Carbide SchottkyVoltage - DC Reverse (Vr) (Max): 650 VCurrent - Average Rectified (Io): 12AVoltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 ASpeed: No Recovery Time > 500mA (Io)Reverse Recovery Time (trr): 0 nsCurrent - Reverse Leakage @ Vr: 80 µA @ 650 VCapacitance @ Vr, F: 380pF @ 1V, 1MHzMounting Type: Through HolePackage / Case: TO-220-2Operating Temperature - Junction: 175°C (Max)NXPSC126506Q | WeEn Semiconductors | NHE Electronics
NXPSC126506Q were obtained directly from authorized WeEn Semiconductors distributors and other trusted sources throughout the world.