NXPSC12650B6J | WeEn Semiconductors

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NXPSC12650B6J, WeEn Semiconductors, Discrete Semiconductor Products~Diodes - Rectifiers - Single, SILICON CARBIDE POWER DIODE

NXPSC12650B6J Images

Product Attributes：

Part Number: NXPSC12650B6J

Manufacturer: WeEn Semiconductors

Description: SILICON CARBIDE POWER DIODE

Category: Discrete Semiconductor Products~Diodes - Rectifiers - Single

NXPSC12650B6J Datasheet (PDF)

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Product Specifications：

Manufacturer Product Number: NXPSC12650B6J

Mfr: WeEn Semiconductors

Detailed Description: SILICON CARBIDE POWER DIODE

Product Category: Discrete Semiconductor Products~Diodes - Rectifiers - Single

Package: Tube

Series: -

Part Status: Active

Diode Type: Silicon Carbide Schottky

Voltage - DC Reverse (Vr) (Max): 650 V

Current - Average Rectified (Io): 12A

Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A

Speed: No Recovery Time > 500mA (Io)

Reverse Recovery Time (trr): 0 ns

Current - Reverse Leakage @ Vr: 80 µA @ 650 V

Capacitance @ Vr, F: 380pF @ 1V, 1MHz

Mounting Type: Surface Mount

Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Operating Temperature - Junction: 175°C (Max)

NXPSC12650B6J | WeEn Semiconductors | NHE Electronics

NXPSC12650B6J were obtained directly from authorized WeEn Semiconductors distributors and other trusted sources throughout the world.

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