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WNSC10650T6J, WeEn Semiconductors, Discrete Semiconductor Products~Diodes - Rectifiers - Single, SILICON CARBIDE POWER DIODE
DIODE GEN PURP 600V 10A TO220-2
DIODE SCHOTTKY 650V 4A D2PAK
SILICON CARBIDE SCHOTTKY DIODE
BYC15-1200PQ/TO-220AC/STANDARD M
Product Specifications:
Manufacturer Product Number: WNSC10650T6JMfr: WeEn SemiconductorsDetailed Description: SILICON CARBIDE POWER DIODEProduct Category: Discrete Semiconductor Products~Diodes - Rectifiers - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: -Part Status: ActiveDiode Type: Silicon Carbide SchottkyVoltage - DC Reverse (Vr) (Max): 650 VCurrent - Average Rectified (Io): 10AVoltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 ASpeed: No Recovery Time > 500mA (Io)Reverse Recovery Time (trr): 0 nsCurrent - Reverse Leakage @ Vr: 60 µA @ 650 VCapacitance @ Vr, F: 328pF @ 1V, 1MHzMounting Type: Surface MountPackage / Case: 4-VDFN Exposed PadOperating Temperature - Junction: 175°C (Max)WNSC10650T6J | WeEn Semiconductors | NHE Electronics
WNSC10650T6J were obtained directly from authorized WeEn Semiconductors distributors and other trusted sources throughout the world.