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FQI27N25TU, onsemi, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, POWER FIELD-EFFECT TRANSISTOR, 2
Product Attributes:
Part Number: FQI27N25TU
Manufacturer: onsemi
Description: POWER FIELD-EFFECT TRANSISTOR, 2
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
FQI27N25TU Datasheet (PDF)
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Product Specifications:
MfrPart.: FQI27N25TUMfr: onsemiDescription: POWER FIELD-EFFECT TRANSISTOR, 2Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: BulkSeries: QFET®PartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 250 VCurrent-ContinuousDrain(Id)@25°C: 25.5A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 10VRdsOn(Max)@IdVgs: 110mOhm @ 12.75A, 10VVgs(th)(Max)@Id: 5V @ 250µAGateCharge(Qg)(Max)@Vgs: 65 nC @ 10 VVgs(Max): ±30VInputCapacitance(Ciss)(Max)@Vds: 2.45 pF @ 25 VFETFeature: -PowerDissipation(Max): 3.13W (Ta), 180W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Through HoleSupplierDevicePackage: I2PAK (TO-262)FQI27N25TU | onsemi | NHE Electronics
FQI27N25TU were obtained directly from authorized onsemi distributors and other trusted sources throughout the world.