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    • A Fast Developed Electronic Components Distributor
    HGTP10N120BN, onsemi, Discrete Semiconductor Products~Transistors - IGBTs - Single, IGBT 1200V 35A 298W TO220AB
    HGTP10N120BN Images
    HGTP10N120BN Images
    Product Attributes：
  • Part Number: HGTP10N120BN
  • Manufacturer: onsemi
  • Description: IGBT 1200V 35A 298W TO220AB
  • Category: Discrete Semiconductor Products~Transistors - IGBTs - Single
  • HGTP10N120BN Datasheet (PDF)
  • Order with confidence, there are no lead times for in-stock products.
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    Product Specifications：
  • MfrPart.: HGTP10N120BN
  • Mfr: onsemi
  • Description: IGBT 1200V 35A 298W TO220AB
  • Product Category: Discrete Semiconductor Products~Transistors - IGBTs - Single
  • Package: Tube
  • Series: -
  • PartStatus: Not For New Designs
  • IGBTType: NPT
  • Voltage-CollectorEmitterBreakdown(Max): 1200 V
  • Current-Collector(Ic)(Max): 35 A
  • Current-CollectorPulsed(Icm): 80 A
  • Vce(on)(Max)@VgeIc: 2.7V @ 15V, 10A
  • Power-Max: 298 W
  • SwitchingEnergy: 320µJ (on), 800µJ (off)
  • InputType: Standard
  • GateCharge: 100 nC
  • Td(on/off)@25°C: 23ns/165ns
  • TestCondition: 960V, 10A, 10Ohm, 15V
  • ReverseRecoveryTime(trr): -
  • OperatingTemperature: -55°C ~ 150°C (TJ)
  • MountingType: Through Hole
  • Package/Case: TO-220-3
  • HGTP10N120BN | onsemi | NHE Electronics
    • HGTP10N120BN were obtained directly from authorized onsemi distributors and other trusted sources throughout the world.
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