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HGTP5N120BND, onsemi, Discrete Semiconductor Products~Transistors - IGBTs - Single, IGBT 1200V 21A 167W TO220AB
HGTP5N120BND Images
HGTP5N120BND Images
Product Attributes:
  • Part Number: HGTP5N120BND
  • Manufacturer: onsemi
  • Description: IGBT 1200V 21A 167W TO220AB
  • Category: Discrete Semiconductor Products~Transistors - IGBTs - Single
  • HGTP5N120BND Datasheet (PDF)
  • Order with confidence, there are no lead times for in-stock products.
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    Product Specifications:
  • MfrPart.: HGTP5N120BND
  • Mfr: onsemi
  • Description: IGBT 1200V 21A 167W TO220AB
  • Product Category: Discrete Semiconductor Products~Transistors - IGBTs - Single
  • Package: Tube
  • Series: -
  • PartStatus: Not For New Designs
  • IGBTType: NPT
  • Voltage-CollectorEmitterBreakdown(Max): 1200 V
  • Current-Collector(Ic)(Max): 21 A
  • Current-CollectorPulsed(Icm): 40 A
  • Vce(on)(Max)@VgeIc: 2.7V @ 15V, 5A
  • Power-Max: 167 W
  • SwitchingEnergy: 450µJ (on), 390µJ (off)
  • InputType: Standard
  • GateCharge: 53 nC
  • Td(on/off)@25°C: 22ns/160ns
  • TestCondition: 960V, 5A, 25Ohm, 15V
  • ReverseRecoveryTime(trr): 65 ns
  • OperatingTemperature: -55°C ~ 150°C (TJ)
  • MountingType: Through Hole
  • Package/Case: TO-220-3
  • HGTP5N120BND | onsemi | NHE Electronics
  • HGTP5N120BND were obtained directly from authorized onsemi distributors and other trusted sources throughout the world.
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