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MJD112-1G, onsemi, Discrete Semiconductor Products~Transistors - Bipolar (BJT) - Single, TRANS NPN DARL 100V 2A IPAK
Product Attributes：
Part Number: MJD112-1G
Manufacturer: onsemi
Description: TRANS NPN DARL 100V 2A IPAK
Category: Discrete Semiconductor Products~Transistors - Bipolar (BJT) - Single
MJD112-1G Datasheet (PDF)
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Product Specifications：
MfrPart.: MJD112-1GMfr: onsemiDescription: TRANS NPN DARL 100V 2A IPAKProduct Category: Discrete Semiconductor Products~Transistors - Bipolar (BJT) - SinglePackage: TubeSeries: -PartStatus: ActiveTransistorType: NPN - DarlingtonCurrent-Collector(Ic)(Max): 2 AVoltage-CollectorEmitterBreakdown(Max): 100 VVceSaturation(Max)@IbIc: 3V @ 40mA, 4ACurrent-CollectorCutoff(Max): 20µADCCurrentGain(hFE)(Min)@IcVce: 1000 @ 2A, 3VPower-Max: 1.75 WFrequency-Transition: 25MHzOperatingTemperature: -65°C ~ 150°C (TJ)MountingType: Through HolePackage/Case: TO-251-3 Short Leads, IPak, TO-251AAMJD112-1G | onsemi | NHE Electronics
MJD112-1G were obtained directly from authorized onsemi distributors and other trusted sources throughout the world.
