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MJD122-1G, onsemi, Discrete Semiconductor Products~Transistors - Bipolar (BJT) - Single, TRANS NPN DARL 100V 8A DPAK
Product Attributes：
Part Number: MJD122-1G
Manufacturer: onsemi
Description: TRANS NPN DARL 100V 8A DPAK
Category: Discrete Semiconductor Products~Transistors - Bipolar (BJT) - Single
MJD122-1G Datasheet (PDF)
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Product Specifications：
MfrPart.: MJD122-1GMfr: onsemiDescription: TRANS NPN DARL 100V 8A DPAKProduct Category: Discrete Semiconductor Products~Transistors - Bipolar (BJT) - SinglePackage: TubeSeries: -PartStatus: ActiveTransistorType: NPN - DarlingtonCurrent-Collector(Ic)(Max): 8 AVoltage-CollectorEmitterBreakdown(Max): 100 VVceSaturation(Max)@IbIc: 4V @ 80mA, 8ACurrent-CollectorCutoff(Max): 10µADCCurrentGain(hFE)(Min)@IcVce: 1000 @ 4A, 4VPower-Max: 1.75 WFrequency-Transition: 4MHzOperatingTemperature: -65°C ~ 150°C (TJ)MountingType: Surface MountPackage/Case: TO-252-3, DPak (2 Leads + Tab), SC-63MJD122-1G | onsemi | NHE Electronics
MJD122-1G were obtained directly from authorized onsemi distributors and other trusted sources throughout the world.
