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MJD3055TF, onsemi, Discrete Semiconductor Products~Transistors - Bipolar (BJT) - Single, NPN EPITAXIAL SILICON TRANSISTOR
Product Attributes:
Part Number: MJD3055TF
Manufacturer: onsemi
Description: NPN EPITAXIAL SILICON TRANSISTOR
Category: Discrete Semiconductor Products~Transistors - Bipolar (BJT) - Single
MJD3055TF Datasheet (PDF)
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Product Specifications:
MfrPart.: MJD3055TFMfr: onsemiDescription: NPN EPITAXIAL SILICON TRANSISTORProduct Category: Discrete Semiconductor Products~Transistors - Bipolar (BJT) - SinglePackage: BulkSeries: -PartStatus: ActiveTransistorType: NPNCurrent-Collector(Ic)(Max): 10 AVoltage-CollectorEmitterBreakdown(Max): 60 VVceSaturation(Max)@IbIc: 8V @ 3.3A, 10ACurrent-CollectorCutoff(Max): 50µADCCurrentGain(hFE)(Min)@IcVce: 20 @ 4A, 4VPower-Max: 1.75 WFrequency-Transition: 2MHzOperatingTemperature: 150°C (TJ)MountingType: Surface MountPackage/Case: TO-252-3, DPak (2 Leads + Tab), SC-63MJD3055TF | onsemi | NHE Electronics
MJD3055TF were obtained directly from authorized onsemi distributors and other trusted sources throughout the world.