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    NGTB10N60R2DT4G, onsemi, Discrete Semiconductor Products~Transistors - IGBTs - Single, INSULATED GATE BIPOLAR TRANSISTO
    NGTB10N60R2DT4G Images
    NGTB10N60R2DT4G Images
    Product Attributes：
  • Part Number: NGTB10N60R2DT4G
  • Manufacturer: onsemi
  • Description: INSULATED GATE BIPOLAR TRANSISTO
  • Category: Discrete Semiconductor Products~Transistors - IGBTs - Single
  • NGTB10N60R2DT4G Datasheet (PDF)
  • Order with confidence, there are no lead times for in-stock products.
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    Product Specifications：
  • MfrPart.: NGTB10N60R2DT4G
  • Mfr: onsemi
  • Description: INSULATED GATE BIPOLAR TRANSISTO
  • Product Category: Discrete Semiconductor Products~Transistors - IGBTs - Single
  • Package: Bulk
  • Series: -
  • PartStatus: Active
  • IGBTType: -
  • Voltage-CollectorEmitterBreakdown(Max): 600 V
  • Current-Collector(Ic)(Max): 20 A
  • Current-CollectorPulsed(Icm): 40 A
  • Vce(on)(Max)@VgeIc: 2.1V @ 15V, 10A
  • Power-Max: 72 W
  • SwitchingEnergy: 412µJ (on), 140µJ (off)
  • InputType: Standard
  • GateCharge: 53 nC
  • Td(on/off)@25°C: 48ns/120ns
  • TestCondition: 300V, 10A, 30Ohm, 15V
  • ReverseRecoveryTime(trr): 90 ns
  • OperatingTemperature: 175°C (TJ)
  • MountingType: Surface Mount
  • Package/Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • NGTB10N60R2DT4G | onsemi | NHE Electronics
    • NGTB10N60R2DT4G were obtained directly from authorized onsemi distributors and other trusted sources throughout the world.
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