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NGTD13T65F2WP, onsemi, Discrete Semiconductor Products~Transistors - IGBTs - Single, IGBT TRENCH FIELD STOP 650V DIE
NGTD13T65F2WP Images
NGTD13T65F2WP Images
Product Attributes:
  • Part Number: NGTD13T65F2WP
  • Manufacturer: onsemi
  • Description: IGBT TRENCH FIELD STOP 650V DIE
  • Category: Discrete Semiconductor Products~Transistors - IGBTs - Single
  • NGTD13T65F2WP Datasheet (PDF)
  • Order with confidence, there are no lead times for in-stock products.
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    Product Specifications:
  • MfrPart.: NGTD13T65F2WP
  • Mfr: onsemi
  • Description: IGBT TRENCH FIELD STOP 650V DIE
  • Product Category: Discrete Semiconductor Products~Transistors - IGBTs - Single
  • Package: Bulk
  • Series: -
  • PartStatus: Active
  • IGBTType: Trench Field Stop
  • Voltage-CollectorEmitterBreakdown(Max): 650 V
  • Current-Collector(Ic)(Max): -
  • Current-CollectorPulsed(Icm): 120 A
  • Vce(on)(Max)@VgeIc: 2.2V @ 15V, 30A
  • Power-Max: -
  • SwitchingEnergy: -
  • InputType: Standard
  • GateCharge: -
  • Td(on/off)@25°C: -
  • TestCondition: -
  • ReverseRecoveryTime(trr): -
  • OperatingTemperature: -55°C ~ 175°C (TJ)
  • MountingType: Surface Mount
  • Package/Case: Die
  • NGTD13T65F2WP | onsemi | NHE Electronics
  • NGTD13T65F2WP were obtained directly from authorized onsemi distributors and other trusted sources throughout the world.
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