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NJVMJD112G, onsemi, Discrete Semiconductor Products~Transistors - Bipolar (BJT) - Single, TRANS NPN DARL 100V 2A DPAK-4
NJVMJD112G Images
NJVMJD112G Images
Product Attributes:
  • Part Number: NJVMJD112G
  • Manufacturer: onsemi
  • Description: TRANS NPN DARL 100V 2A DPAK-4
  • Category: Discrete Semiconductor Products~Transistors - Bipolar (BJT) - Single
  • NJVMJD112G Datasheet (PDF)
  • Order with confidence, there are no lead times for in-stock products.
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    Product Specifications:
  • MfrPart.: NJVMJD112G
  • Mfr: onsemi
  • Description: TRANS NPN DARL 100V 2A DPAK-4
  • Product Category: Discrete Semiconductor Products~Transistors - Bipolar (BJT) - Single
  • Package: Tube
  • Series: -
  • PartStatus: Active
  • TransistorType: NPN - Darlington
  • Current-Collector(Ic)(Max): 2 A
  • Voltage-CollectorEmitterBreakdown(Max): 100 V
  • VceSaturation(Max)@IbIc: 3V @ 40mA, 4A
  • Current-CollectorCutoff(Max): 20µA
  • DCCurrentGain(hFE)(Min)@IcVce: 1000 @ 2A, 3V
  • Power-Max: 1.75 W
  • Frequency-Transition: 25MHz
  • OperatingTemperature: -65°C ~ 150°C (TJ)
  • MountingType: Surface Mount
  • Package/Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • NJVMJD112G | onsemi | NHE Electronics
  • NJVMJD112G were obtained directly from authorized onsemi distributors and other trusted sources throughout the world.
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