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    NSVMUN5212DW1T1G, onsemi, Discrete Semiconductor Products~Transistors - Bipolar (BJT) - Arrays, Pre-Biased, TRANS 2NPN PREBIAS 0.25W SOT363
    NSVMUN5212DW1T1G Images
    NSVMUN5212DW1T1G Images
    Product Attributes：
  • Part Number: NSVMUN5212DW1T1G
  • Manufacturer: onsemi
  • Description: TRANS 2NPN PREBIAS 0.25W SOT363
  • Category: Discrete Semiconductor Products~Transistors - Bipolar (BJT) - Arrays, Pre-Biased
  • NSVMUN5212DW1T1G Datasheet (PDF)
  • Order with confidence, there are no lead times for in-stock products.
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    Product Specifications：
  • MfrPart.: NSVMUN5212DW1T1G
  • Mfr: onsemi
  • Description: TRANS 2NPN PREBIAS 0.25W SOT363
  • Product Category: Discrete Semiconductor Products~Transistors - Bipolar (BJT) - Arrays, Pre-Biased
  • Package: Tape & Reel (TR),Cut Tape (CT)
  • Series: -
  • PartStatus: Active
  • TransistorType: 2 NPN - Pre-Biased (Dual)
  • Current-Collector(Ic)(Max): 100mA
  • Voltage-CollectorEmitterBreakdown(Max): 50V
  • Resistor-Base(R1): 22kOhms
  • Resistor-EmitterBase(R2): 22kOhms
  • DCCurrentGain(hFE)(Min)@IcVce: 60 @ 5mA, 10V
  • VceSaturation(Max)@IbIc: 250mV @ 300µA, 10mA
  • Current-CollectorCutoff(Max): 500nA
  • Frequency-Transition: -
  • Power-Max: 250mW
  • MountingType: Surface Mount
  • Package/Case: 6-TSSOP, SC-88, SOT-363
  • NSVMUN5212DW1T1G | onsemi | NHE Electronics
    • NSVMUN5212DW1T1G were obtained directly from authorized onsemi distributors and other trusted sources throughout the world.
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