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NSVMUN531335DW1T1G, onsemi, Discrete Semiconductor Products~Transistors - Bipolar (BJT) - Arrays, Pre-Biased, TRANS PREBIAS NPN/PNP 50V 6TSSOP
NSVMUN531335DW1T1G Images
NSVMUN531335DW1T1G Images
Product Attributes:
  • Part Number: NSVMUN531335DW1T1G
  • Manufacturer: onsemi
  • Description: TRANS PREBIAS NPN/PNP 50V 6TSSOP
  • Category: Discrete Semiconductor Products~Transistors - Bipolar (BJT) - Arrays, Pre-Biased
  • NSVMUN531335DW1T1G Datasheet (PDF)
  • Order with confidence, there are no lead times for in-stock products.
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    Product Specifications:
  • MfrPart.: NSVMUN531335DW1T1G
  • Mfr: onsemi
  • Description: TRANS PREBIAS NPN/PNP 50V 6TSSOP
  • Product Category: Discrete Semiconductor Products~Transistors - Bipolar (BJT) - Arrays, Pre-Biased
  • Package: Tape & Reel (TR),Cut Tape (CT)
  • Series: Automotive, AEC-Q101
  • PartStatus: Active
  • TransistorType: 1 NPN Pre-Biased, 1 PNP
  • Current-Collector(Ic)(Max): 100mA
  • Voltage-CollectorEmitterBreakdown(Max): 50V
  • Resistor-Base(R1): 47kOhms, 2.2kOhms
  • Resistor-EmitterBase(R2): 47kOhms
  • DCCurrentGain(hFE)(Min)@IcVce: 80 @ 5mA, 10V
  • VceSaturation(Max)@IbIc: 250mV @ 300µA, 10mA
  • Current-CollectorCutoff(Max): 500nA
  • Frequency-Transition: -
  • Power-Max: 187mW
  • MountingType: Surface Mount
  • Package/Case: 6-TSSOP, SC-88, SOT-363
  • NSVMUN531335DW1T1G | onsemi | NHE Electronics
  • NSVMUN531335DW1T1G were obtained directly from authorized onsemi distributors and other trusted sources throughout the world.
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