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NTD4960N-1G, onsemi, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 30V 8.9A/55A IPAK
NTD4960N-1G Images
NTD4960N-1G Images
Product Attributes:
  • Part Number: NTD4960N-1G
  • Manufacturer: onsemi
  • Description: MOSFET N-CH 30V 8.9A/55A IPAK
  • Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
  • NTD4960N-1G Datasheet (PDF)
  • Order with confidence, there are no lead times for in-stock products.
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    Product Specifications:
  • MfrPart.: NTD4960N-1G
  • Mfr: onsemi
  • Description: MOSFET N-CH 30V 8.9A/55A IPAK
  • Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
  • Package: Tube
  • Series: -
  • PartStatus: Obsolete
  • FETType: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • DraintoSourceVoltage(Vdss): 30 V
  • Current-ContinuousDrain(Id)@25°C: 8.9A (Ta), 55A (Tc)
  • DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10V
  • RdsOn(Max)@IdVgs: 8mOhm @ 30A, 10V
  • Vgs(th)(Max)@Id: 2.5V @ 250µA
  • GateCharge(Qg)(Max)@Vgs: 22 nC @ 10 V
  • Vgs(Max): ±20V
  • InputCapacitance(Ciss)(Max)@Vds: 1300 pF @ 15 V
  • FETFeature: -
  • PowerDissipation(Max): 1.07W (Ta), 35.71W (Tc)
  • OperatingTemperature: -55°C ~ 175°C (TJ)
  • MountingType: Through Hole
  • SupplierDevicePackage: I-Pak
  • NTD4960N-1G | onsemi | NHE Electronics
  • NTD4960N-1G were obtained directly from authorized onsemi distributors and other trusted sources throughout the world.
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